Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering
Title | Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering |
Publication Type | Journal Article |
Year of Publication | 2007 |
Authors | Sodky H Mohamed, André Anders |
Journal | Thin Solid Films |
Volume | 515 |
Start Page | 5264 |
Issue | 13 |
Pagination | 5264-5269 |
Date Published | 05/2007 |
Keywords | Dual magnetron sputtering, electrical resistivity, Er ion implantation, optical properties, tungsten oxide films |
Abstract | Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures |
DOI | 10.1016/j.tsf.2006.12.179 |
LBNL Report Number | LBNL-62248 |