@article {12182,
	title = {Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering},
	journal = {Thin Solid Films},
	volume = {515},
	number = {8},
	year = {2007},
	month = {05/2007},
	pages = {5264-5269},
	chapter = {5264},
	abstract = {<p>Amorphous and partially crystalline WO<sub>3</sub> thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 10<sup>14</sup> to 5 x 10<sup>15</sup> ions/cm<sup>2</sup>. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70{\textdegree}C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures</p>},
	keywords = {Dual magnetron sputtering, electrical resistivity, Er ion implantation, optical properties, tungsten oxide films},
	doi = {10.1016/j.tsf.2006.12.179},
	author = {Sodky H. Mohamed and Andr{\'e} Anders}
}
