01644nas a2200205   4500008004100000245011300041210006900154260001200223300001400235490000800249520093200257653003001189653002701219653002401246653002301270653002501293100002301318700001901341856007801360       2007                        eng d00aPhysical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering0 aPhysical properties of erbium implanted tungsten oxide films dep  c05/2007  a5264-52690 v5153 a<p>Amorphous and partially crystalline WO<sub>3</sub> thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 10<sup>14</sup> to 5 x 10<sup>15</sup> ions/cm<sup>2</sup>. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures</p>10aDual magnetron sputtering10aelectrical resistivity10aEr ion implantation10aoptical properties10atungsten oxide films1 aMohamed, Sodky, H.1 aAnders, André  uhttps://facades.lbl.gov/publications/physical-properties-erbium-implanted