Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy
Title | Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy |
Publication Type | Conference Paper |
Year of Publication | 1994 |
Authors | Nathan Newman, T.C. Fu, Z. Liu, Zuzanna Liliental-Weber, Michael D Rubin, James S Chan, Erin C Jones, Jennifer T Ross, Ian M Tidswell, Kin Man Yu, Nathan W Cheung, Eicke R Weber |
Call Number | LBL-37296 |
Abstract | Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail. |
LBNL Report Number | LBL-37296 |