01830nas a2200181   4500008003900000245010000039210006900139300001800208490000700226520121300233100002801446700002201474700001701496700001601513700002401529700001901553856007601572       2011                          d00aAchieving high mobility ZnO:Al at very high growth rates by dc filtered cathodic arc deposition0 aAchieving high mobility ZnOAl at very high growth rates by dc fi  a232003-2320070 v443 a<p>Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500–1300&thinsp;nm thick and highly transparent ZnO&thinsp;:&thinsp;Al films were grown on glass at rates exceeding 250&thinsp;nm&thinsp;min<sup>−1</sup> while maintaining resistivity below 5 <strong>×</strong> 10<sup>−4</sup>&thinsp;Ω&thinsp;cm with electron mobility as high as 60&thinsp;cm<sup>2</sup>&thinsp;V<sup>−1</sup>&thinsp;s<sup>−1</sup>.</p>1 aMendelsberg, Rueben, J.1 aLim, Sunnie, H.N.1 aZhu, Yuankun1 aWallig, Joe1 aMilliron, Delia, J.1 aAnders, André  uhttps://facades.lbl.gov/publications/achieving-high-mobility-znoal-very