01539nas a2200241 4500008003900000022001400039245011000053210006900163260001100232300001400243490000700257520076200264653003001026653002201056653002601078100001701104700002801121700002201149700001501171700001601186700001901202856007601221 2012 d a0884-291400aImproved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition0 aImproved structural and electrical properties of thin ZnOAl film c3/2012 a857 - 8620 v273 a

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

10aphysical vapor deposition10aPlasma deposition10aTransparent conductor1 aZhu, Yuankun1 aMendelsberg, Rueben, J.1 aLim, Sunnie, H.N.1 aZhu, Jiaqi1 aHan, Jiecai1 aAnders, André uhttps://facades.lbl.gov/publications/improved-structural-and-electrical01830nas a2200181 4500008003900000245010000039210006900139300001800208490000700226520121300233100002801446700002201474700001701496700001601513700002401529700001901553856007601572 2011 d00aAchieving high mobility ZnO:Al at very high growth rates by dc filtered cathodic arc deposition0 aAchieving high mobility ZnOAl at very high growth rates by dc fi a232003-2320070 v443 a

Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500–1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min−1 while maintaining resistivity below 5 × 10−4 Ω cm with electron mobility as high as 60 cm2 V−1 s−1.

1 aMendelsberg, Rueben, J.1 aLim, Sunnie, H.N.1 aZhu, Yuankun1 aWallig, Joe1 aMilliron, Delia, J.1 aAnders, André uhttps://facades.lbl.gov/publications/achieving-high-mobility-znoal-very