01696nas a2200193   4500008004100000245018300041210006900224260001200293300001100305490000700316520097400323100002301297700002601320700002201346700001901368700002101387700001801408856007601426       2008                        eng d00aThe structure and electron energy loss near edge structure of tungsten oxide thin films prepared by pulsed cathodic arc deposition and plasma-assisted pulsed magnetron sputtering0 astructure and electron energy loss near edge structure of tungst  c04/2008  a1752160 v203 a<p>The microstructure and energy-loss near-edge structure (ELNES) of pulsed cathodic arc and pulsed magnetron sputtered WO<sub>3</sub> thin films were investigated. It was found that the cathodic arc deposited material consisted of the α-WO<sub>3</sub> phase with a high degree of crystallinity. In contrast, the magnetron sputtered material was highly disordered making it difficult to determine its phase. A self-consistent real space multiple scattering approach was used to calculate the NES of the various phases of WO<sub>3</sub>. Each phase was found to exhibit a unique NES allowing different phases of WO<sub>3</sub> to be identified. The real space approach also allowed the origin of the main features in the NES to be investigated as the cluster size increased. The calculated NES for the room temperature γ-WO<sub>3</sub> was found to compare well to previous X-ray absorption spectra and to NES obtained by full-potential band structure calculation.</p>1 aField, Matthew, R.1 aMcCulloch, Dougal, G.1 aLim, Sunnie, H.N.1 aAnders, André1 aKeast, Vicki, J.1 aBurgess, R.W.  uhttps://facades.lbl.gov/publications/structure-and-electron-energy-loss01925nas a2200241   4500008004100000245007500041210006900116260001200185300001400197490000800211520114900219653003001368653003801398653001601436653001901452653003701471100001901508700002001527700002201547700002201569700002101591856007101612       2006                        eng d00aPlasma biasing to control the growth conditions of diamond-like carbon0 aPlasma biasing to control the growth conditions of diamondlike c  c01/2007  a4628-46320 v2013 a<p>It is well known that the structure and properties of diamond-like carbon, and in particular the sp<sup>3</sup>/sp<sup>2</sup> ratio, can be controlled by the energy of the condensing carbon ions or atoms. In many practical cases, the energy of ions arriving at the surface of the growing film is determined by the bias applied to the substrate. The bias causes a sheath to form between substrate and plasma in which the potential difference between plasma potential and surface potential drops. In this contribution, we demonstrate that the same results can be obtained with grounded substrates by shifting the plasma potential. This plasma biasing (as opposed to substrate biasing) is shown to work well with pulsed cathodic carbon arcs, resulting in tetrahedral amorphous carbon (ta-C) films that are comparable to the films obtained with the conventional substrate bias. To verify the plasma bias approach, ta-C films were deposited by both conventional and plasma bias and characterized by transmission electron microscopy (TEM) and electron energy loss spectrometry (EELS). Detailed data for comparison of these films are provided.</p>10aDiamond-like carbon films10aElectron energy loss spectroscopy10aPlasma bias10aSubstrate bias10atransmission electron microscopy1 aAnders, André1 aPasaja, Nitisak1 aLim, Sunnie, H.N.1 aPetersen, Tim, C.1 aKeast, Vicki, J.  uhttps://facades.lbl.gov/publications/plasma-biasing-control-growth