01050nas a2200133   4500008004100000050001400041245013600055210006900191260002500260490000700285520052900292100001900821856007600840       2008                        eng d  aLBNL-171E00aSelf-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions0 aSelfsputtering runaway in high power impulse magnetron sputterin  aBoulder, COc08/20040 v923 a<p>Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ~ Q1/2, whereas the rate normalized to the average power decreases ~ Q-1/2, with Q being the mean ion charge state number.</p>1 aAnders, André  uhttps://facades.lbl.gov/publications/self-sputtering-runaway-high-power