01431nas a2200133   4500008004100000050001500041245010100056210006900157520093400226100001901160700001801179700002101197856007901218       1994                        eng d  aLBNL-3900500aCharacterization of Tantalum Oxide Films Prepared by Sol-Gel Process for electrochemical devices0 aCharacterization of Tantalum Oxide Films Prepared by SolGel Proc3 a<p>Tantalum oxide films were prepared by sol-gel process using tantalum ethoxide Ta(OC<sub>2</sub>H<sub>5</sub>)<sub>5</sub>. The dependence of deposition conditions (<em>i.e.</em> composition of polymeric solutions and spinning rate) on ionic conductivities for tantalum oxide films were studied. The best results achieved for films fabricated by the spin coating technique were from clear polymeric solutions. These films had low packing density ρ=3.2 g/cm<sup>3</sup> and good proton conductivity (about 10<sup>-6</sup> Ω<sup>-1</sup> cm<sup>-1</sup>). X-ray photoelectron spectroscopy (XPS) was used for studying the compositions of the tantalum oxide films. We report on the use of tantalum oxide films as ion conductors in devices consisting of WO<sub>3</sub>/Ta<sub>2</sub>O<sub>5</sub>/H<sup>+</sup> ion storage polymer structure. We found tantalum oxide to have very good properties for proton device applications.</p>1 aÖzer, Nilgün1 aHe, Yongxiang1 aLampert, Carl, M  uhttps://facades.lbl.gov/publications/characterization-tantalum-oxide-films