@article {58917, title = {Improved structural and electrical properties of thin ZnO:Al films by dc filtered cathodic arc deposition}, journal = {Journal of Materials Research}, volume = {27}, year = {2012}, month = {3/2012}, pages = {857 - 862}, abstract = {

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 {\texttimes} 10-4 Ωcm. Resistivity as low as 5.2 {\texttimes} 10-4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

}, keywords = {physical vapor deposition, Plasma deposition, Transparent conductor}, issn = {0884-2914}, doi = {10.1557/jmr.2011.342}, author = {Yuankun Zhu and Rueben J. Mendelsberg and Sunnie H.N. Lim and Jiaqi Zhu and Jiecai Han and Andr{\'e} Anders} } @article {2974, title = {Achieving high mobility ZnO:Al at very high growth rates by dc filtered cathodic arc deposition}, journal = {Journal of Physics D: Applied Physics}, volume = {44}, year = {2011}, pages = {232003-232007}, chapter = {232003}, abstract = {

Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500{\textendash}1300\ nm thick and highly transparent ZnO\ :\ Al films were grown on glass at rates exceeding 250\ nm\ min-1 while maintaining resistivity below 5 {\texttimes} 10-4\ Ω\ cm with electron mobility as high as 60\ cm2\ V-1\ s-1.

}, doi = {10.1088/0022-3727/44/23/232003}, author = {Rueben J. Mendelsberg and Sunnie H.N. Lim and Yuankun Zhu and Joe Wallig and Delia J. Milliron and Andr{\'e} Anders} } @article {58919, title = {Dynamically Modulating the Surface Plasmon Resonance of Doped Semiconductor Nanocrystals}, journal = {Nano Letters}, volume = {11}, year = {2011}, month = {10/2011}, pages = {4415 - 4420}, abstract = {

Localized surface plasmon absorption features arise at high doping levels in semiconductor nanocrystals, appearing in the near-infrared range. Here we show that the surface plasmons of tin-doped indium oxide nanocrystal films can be dynamically and reversibly tuned by postsynthetic electrochemical modulation of the electron concentration. Without ion intercalation and the associated material degradation, we induce a \> 1200 nm shift in the plasmon wavelength and a factor of nearly three change in the carrier density.

}, keywords = {doping, indium tin oxide, nanocrystal, spectroelectrochemistry, surface plasmon}, issn = {1530-6984}, doi = {10.1021/nl202597n}, author = {Guillermo Garcia and Raffaella Buonsanti and Evan L. Runnerstrom and Rueben J. Mendelsberg and Anna Llordes and Andr{\'e} Anders and Thomas J. Richardson and Delia J. Milliron} }