@conference {11636,
	title = {Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy},
	booktitle = {Materials Research Society},
	volume = {300},
	year = {1993},
	month = {04/1993},
	address = {San Francisco, CA},
	abstract = {<p>Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 {\textdegree}C, while the crystallinity of AlN/(0001) Al<sub>2</sub>O<sub>3</sub> samples improved from 700 to 850 {\textdegree}C. The optical absorption characteristics of the AlN/(0001) Al<sub>2</sub>O<sub>3</sub> films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.</p>},
	author = {James S. Chan and T.C. Fu and Nathan W. Cheung and Jennifer T. Ross and Nathan Newman and Michael D. Rubin}
}
