Origin of Strain in GaN Thin Films
Title | Origin of Strain in GaN Thin Films |
Publication Type | Conference Paper |
Year of Publication | 1996 |
Authors | Christian F Kisielowski, Joachim Krüger, Michael SH Leung, Ralf Klockenbrink, Hiroaki Fujii, Tadeusz Suski, Sudhir G Subramanya, Joel W Ager, III, Michael D Rubin, Eicke R Weber |
Editor | Joachim Krüger |
Conference Name | 23rd International Conference on the Physics of Semiconductors |
Conference Location | Singapore |
Call Number | LBNL-39853 |
Abstract | Photoluminescence measurements are used to determine the strain in GaN thin films grown by Molecular Beam Epitaxy. The strain which originates from growth on lattice mismatched substrates and from differences in thermal expansion coefficients is found to be greatly relaxed. Residual strains are shown to depend on the thickness of GaN buffer layers and the III/V flux ration during main layer growth. The results strongly suggest that the residual biaxial strain caused by the post-growth cooling can be modified by the incorporation of point defects during the main layer growth which introduce an additional hydrostatic strain field. The effect allows for strain engineering of GaN crystals. |
LBNL Report Number | LBNL-39853 |